page . 1 st ad-nov .24.2009 pjp2n60 / PJF2N60 fea tures ? 2a , 600v, r ds(on) =4. 6 @v gs =10v, i d =1a ? low on resistance ? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctives mechanical da t a ? ca se: t o-220ab / it o-220ab molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 600v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note : 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice gate drain source to-220ab / ito-220ab to-220ab ito-220ab internal schematic diagram type marking package packing pjp2n60 p2n60 to-220ab 50pcs/tube p jf2n60 f2n60 ito-220ab 50pcs/tube pa ra m e te r s ym b o l p j p 2 n6 0 p j f 2 n6 0 uni ts d r a i n- s o ur c e vo lta g e v d s 6 0 0 v ga te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 2 2 a p uls e d d r a i n c urr e nt 1 ) i d m 8 8 a m a xi m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t a =2 5 o c p d 4 5 0 .3 6 2 0 0 .1 6 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c avalanche energy with single pulse i as =2.0a, vdd=50v, l=56mh e a s 1 2 0 m j junction-to-case thermal resistance r j c 2 .7 8 6 .2 5 o c /w junction-to ambient thermal resistance r j a 6 2 .5 1 0 0 o c /w 1 2 3 g d s 1 2 3 g s d
page . 2 st ad-nov .24.2009 pjp2n60 / PJF2N60 electrical characteristics ( t a =25 o c unless otherwise noted ) note : plus t e st: pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 6 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 1a - 4.0 4.6 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds =600v, v gs =0v - - 10 ua gate body leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s =4 8 0 v, i d =2 a v gs =1 0 v - 9 .3 1 3 nc ga te - s o ur c e c ha rg e q g s - 2 .0 - ga te - d r a i n c ha r g e q g d - 3.3 - tur n- on d e la y ti me t d (o n) v dd =300v , i d =2a v gs =10v, r g =25 - 10.8 18 ns tur n- on ri s e ti m e t r - 10.4 16 tur n- off d e la y ti me t d (o ff) - 2 3 .6 3 2 tur n- off f a ll ti m e t f - 1 6 .2 2 2 inp ut c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f=1 .0 mh z - 3 2 0 3 8 0 p f outp ut c a p a c i t a nc e c o s s - 30 45 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 3 5.6 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 2 .0 a ma x.p uls e d s o ur c e c urr e nt i s m - - - 8 .0 a d i o d e f o r wa r d vo lta g e v s d i s =2 a , v gs =0 v - - 1 .4 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f =2 a d i /d t=1 0 0 a /us - 2 3 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 1 .0 - uc
pjp2n60 / PJF2N60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.1 output characteristric fig.2 transfer characteristric 0 0 .5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20v~ 6.0v 5.0v 3.0 3 .5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 1 2 3 4 5 r ds(on) - on resistance( ) i d - drain current (a) v g s = 20v vgs=10v 3.0 3 .5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 2 4 6 8 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d = 1a t j = 25 o c 0.1 1 1 0 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s =40v t j = 125 o c 25 o c -55 o c pjp2n60 / PJF2N60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage stad-nov.24.2009 fig.5 on resistance vs junction temperature fig.6 capacitance p age. 3 fig.1 output characteristric fig.2 transfer characteristric 0 0 .5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20v~ 6.0v 5.0v 3.0 3 .5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 1 2 3 4 5 r ds(on) - on resistance( ) i d - drain current (a) v g s = 20v vgs=10v 0 1 00 200 300 400 500 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss coss crss f = 1mhz v g s = 0v 3.0 3 .5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 2 4 6 8 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d = 1a t j = 25 o c 0.5 0 .7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v g s =10 v i d =1.0a 0.1 1 1 0 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s =40v t j = 125 o c 25 o c -55 o c
fig. 7 gate charge waveform pjp2n60 / PJF2N60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage 0.8 0 .9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv bv bv bv dss ds s dss dss - - - - breakdown voltage(normalized) b reakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) tj - junction temperature (oc) i d = 250 a 0.01 0 .1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c 0 2 4 6 8 1 0 12 0 2 4 6 8 10 12 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 2a v d s =480v v d s =300v v d s =120v fig. 7 gate charge waveform pjp2n60 / PJF2N60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage stad-nov.24.2009 p age. 4 fig.9 breakdown voltage vs junction temperature 0.8 0 .9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv bv bv bv dss ds s dss dss - - - - breakdown voltage(normalized) b reakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) tj - junction temperature (oc) i d = 250 a 0.01 0 .1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c 0 2 4 6 8 1 0 12 0 2 4 6 8 10 12 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 2a v d s =480v v d s =300v v d s =120v
page . 5 st ad-nov .24.2009 pjp2n60 / PJF2N60 copyright panjit international, inc 2010 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement
halogen free product declaration (use green molding compound :eler-8 ) 1. pan jit can produce halogen free product use molding compound for packing from mar.2008 that contain br<700 ppm,cl<700ppm, br+cl<1000ppm,sb2o3<100ppm. 2. if your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.
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